2SD1634

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1634 DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·High speed switching ·Good linearity of hFE APPLICATIONS ·Power switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 8 12 0.5 50 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.2A , IB=0 IC=5A; IB=5mA IC=5A ;IB=5mA VCB=100V;IE=0 VCE=100V; IB=0 VEB=7V; IC=0 IC=5A ; VCE=3V 1500 MIN 100 2SD1634 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE TYP. MAX UNIT V 1.5 2.0 100 100 5 10000 V V µA µA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=8A ;IB1=8mA IB2=-8mA; VCC=50V 3.0 5.0 3.0 µs µs µs hFE Classifications Q 1500-6000 P 5000-10000 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1634 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3