2SD1652

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1652 DESCRIPTION ·With TO-3PML package ·Built-in damper diode ·High breakdown voltage ·High speed switching APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 6 16 60 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SD1652 SYMBOL TYP. MAX UNIT V(BR)EBO V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT Emitter-base breakdown voltage IE=200mA , IC=0 IC=0.1A; RBE=< IC=5mA; IE=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V IF=6A IC=5A;IB1=1A;IB2=-2A VCC=200V;RL=40B 7 V Collector-emitter breakdown voltage 800 V Collector-base breakdown voltage 1500 V Collector-emitter saturation voltage 5.0 V Base-emitter saturation voltage 1.5 V Collector cut-off current 10 µA Emitter cut-off current 40 130 mA DC current gain 8 Transition frequency 3 MHz VF tf Diode forward voltage 2.0 V Fall time 0.4 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1652 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3