2SD1666

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1133 ·High reliability ·Wide area of safe operation APPLICATIONS ·For low-frequency and general-purpose amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1666 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -40~150 CONDITIONS Open emitter Open base Open collector MAX 60 60 6 3 8 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ;RBE=: IC=1mA ;IE=0 IE=1mA ;IC=0 IC=2A; IB=0.2A IC=0.5A ; VCE=5V VCB=40V; IE=0 VEB=4V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=5V 70 20 MIN 60 60 6 2SD1666 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V V V 0.6 0.7 1.0 1.0 100 100 280 V V µA µA 60 8 pF MHz hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1666 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1666 4