2SD1667

2SD1667

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2SD1667 - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2SD1667 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1667 DESCRIPTION ·With TO-220F package ·Complement to type 2SB1134 ·Low collector saturation voltage APPLICATIONS ·Relay drivers,high-speed inverters,and other general high-current switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector MAX 60 50 6 5 9 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;RBE=9 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=3A; IB=0.3A VCB=40V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=5V 70 30 MIN 50 60 6 2SD1667 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V V V 0.4 100 100 280 V µA µA 100 30 pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=2.0A; IB1=-IB2=0.2A VCC=20V;R=10C 0.1 1.4 0.2 µs µs µs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1667 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1667 4
2SD1667
物料型号: - 型号:2SD1667 - 制造商:SavantIC Semiconductor

器件简介: - 2SD1667是一款硅NPN功率晶体管,采用TO-220F封装,是2SB1134型号的补充,具有较低的集电极饱和电压。

引脚分配: - 1号引脚:基极(Base) - 2号引脚:集电极(Collector) - 3号引脚:发射极(Emitter)

参数特性: - 集电极-基极电压(VCBO):60V,开发射极 - 集电极-发射极电压(VCEO):50V,开基极 - 发射极-基极电压(VEBO):6V,开集电极 - 集电极电流(Ic):5A - 集电极峰值电流(IcM):9A - 集电极耗散功率(Pc):2W,T=25°C - 结温(Tj):150°C - 存储温度(Tstg):-55°C至150°C

功能详解: - 2SD1667的主要特性包括较低的集电极-发射极饱和电压(VCEsat),在Ic=3A和Ib=0.3A条件下为0.4V。此外,还包括截止区的集电极截止电流(IcBO)和发射极截止电流(IEBO),分别为100nA和100μA。直流电流增益(hFE)在Ic=1A和VCE=2V时为70至280,而在Ic=3A和VCE=2V时为30至280。

应用信息: - 2SD1667适用于继电器驱动器、高速逆变器以及其他一般高电流开关应用。

封装信息: - 封装类型:TO-220F - 封装图示已提供,展示了简化外形和符号。
2SD1667 价格&库存

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