2SD1680

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1680 DESCRIPTION ·With TO-3PFa package ·High speed switching ·High VCBO ·Large collector power dissipation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 70 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 330 200 6 7 10 3 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Fall time CONDITIONS IC=30mA ;IB=0 IC=1mA; IE=0 IC=5A; IB=0.5A IC=5A; IB=0.5A VCE=330V; VBE=0 Ta=100 VEB=6V; IC=0 IC=5A ; VCE=4V IC=5A IB1=0.8A,VEB=-5V,RB=0.5> 15 MIN 200 330 2SD1680 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICES IEBO hFE tf TYP. MAX UNIT V V 1.0 1.2 1 15 1 V V mA mA 0.75 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1680 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3