2SD1712

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1712 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SB1157 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 5 8 60 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=3A ;IB=0.3A IC=3A ; VCE=5V VCB=100V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=3A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=5V 20 60 20 MIN 2SD1712 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT TYP. MAX 2.0 1.8 50 50 UNIT V V µA µA 200 70 20 pF MHz hFE-2 classifications Q 60-120 S 80-60 P 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1712 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3