2SD1729

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1729 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7 3.5 10 1.5 60 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=500mA; IC=0 IC=3A; IB=0.8A IC=3A; IB=0.8A VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE fT VF DC current gain Transition frequency Diode forward voltage IC=0.5A ; VCE=5V IC=0.5A ; VCE=10V IF=-3.5A,IB=0 5 2 MIN 7 2SD1729 SYMBOL V(BR)EBO VCEsat VBEsat TYP. MAX UNIT V 8.0 1.5 10 1 25 V V µA mA MHz 2.0 V Switching times ts tf Storage time IC=3A; IB1=0.8A IB2=-1.6A VCC=200V Fall time 0.2 µs 1.5 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1729 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3