2SD1739

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1739 DESCRIPTION ·With TO-3PFa package ·Wide area of safe operation ·High voltage,high speed APPLICATIONS ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7 6 18 2.5 100 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1739 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Emitter-base breakdown voltage CONDITIONS IC=5A ;IB=1.2A IC=5A ;IB=1.2A IE=1mA ;IC=0 VCB=750V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 IEBO hFE fT Emitter cut-off current DC current gain Transition frequency VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=10V 6 2 1 10 30 MHz mA µA 7 10 MIN TYP. MAX 8.0 1.5 UNIT V V V µA SYMBOL VCEsat VBEsat V(BR)EBO Switching times tstg tf Storage time IC=5A; IB1=1A IB2=-2A; VCC=200V Fall time 0.2 µs 1.5 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1739 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3