2SD1765

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1765 DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·High DC current gain APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 6 2 3 20 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SD1765 SYMBOL TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=50µA; IC=0 100 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA;IB=0 100 V VCEsat Collector-emitter saturation voltage IC=1A ;IB=1mA 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=1A ; VCE=2V 1000 10000 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 25 pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1765 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3