2SD1772

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1772 2SD1772A DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB1192/1192A ·Large collector power dissipation APPLICATIONS ·For power amplification ·For TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter ABSOLUTE MAXIMUM RATINGS AT Ta=25 SYMBOL VCBO PARAMETER Collector-base voltage 2SD1772 VCEO Collector-emitter voltage 2SD1772A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open collector Open base 180 6 1 2 25 w V A A CONDITIONS Open emitter VALUE 200 150 V UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD1772 IC=5mA , IB=0 2SD1772A IE=0.5mA , IC=0 IC=500mA ;IB=50mA IC=300mA ; VCE=10V VCB=200V; IE=0 VEB=4V; IC=0 IC=100mA ; VCE=10V IC=300mA ; VCE=10V IE=0 ; VCB=10V;f=1MHz CONDITIONS 2SD1772 2SD1772A SYMBOL MIN 150 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 180 6 1.0 1.0 50 50 60 50 27 20 pF MHz 240 V V V µA µA V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency IC=100mA ; VCE=10V;f=1MHz hFE-1 Classifications Q 60-140 P 100-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1772 2SD1772A Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1772 2SD1772A 4