2SD1773

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1773 DESCRIPTION ·With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1193 ·High speed switching APPLICATIONS ·For medium speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 50 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 120 120 7 8 12 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SD1773 SYMBOL MAX UNIT VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE fT Collector-emitter sustaining voltage IC=2A , L=10mH IE=50mA ;IC=0 IC=4A ;IB=8mA IC=8A ;IB=80mA IC=4A ;IB=8mA IC=8A ;IB=80mA VCB=120V ;IE=0 VCE=100V ;IB=0 IC=4A ; VCE=3V IC=0.5A ; VCE=10V,f=1MHz 120 V Emitter-base breakdown voltage 7 V Collector-emitter saturation voltage 1.5 V Collector-emitter saturation voltage 3.0 V Base-emitter saturation voltage 2.0 V Base-emitter saturation voltage 3.5 V Collector cut-off current 100 µA Collector cut-off current 10 µA DC current gain 1000 20000 Transition frequency 20 MHz Switching times ton ts tf Turn-on time IC=4A ;IB1=8mA IB2=-8mA; VCC=50V 0.7 µs Storage time 6.0 µs Fall time 2.0 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1773 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3