2SD1828

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1226 ·High DC current gain. ·Large current capacity and wide ASO. ·DARLINGTON APPLICATIONS ·Motor drivers,printer hammer drivers,relay drivers,voltage regulator control. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1828 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 110 100 6 3 5 20 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=5mA; IE=0 IC=50mA; RBE=< IC=1.5A ; IB=3mA IC=1.5A ; IB=3mA VCB=80V;IE=0 VEB=5V;IC=0 IC=1.5A ; VCE=3V IC=1.5A ; VCE=5V 1500 MIN 110 100 2SD1828 SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 0.9 1.5 2.0 0.1 3.0 V V mA mA 4000 20 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=500IB1=-500IB2=1A VCC=50V ,RL=50D 0.8 5.0 1.2 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1828 Fig.2 Outline dimensions 3