2SD1880

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability ·Built in damper diode APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1880 Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 8 30 70 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1880 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current Collector cut-off current DC current gain DC current gain Diode forward voltage Fall time CONDITIONS IC=100mA ;IB=0 IC=6A ;IB=1.2A IC=6A ;IB=1.2A VCB=800V ;IE=0 VEB=4V ;IC=0 VCE=1500V IC=1A ; VCE=5V IC=6A ; VCE=5V IEC=8A IC=6A;RL=33.3@ IB1=1.2A IB2=-2.4A;VCC=200V 0.1 8 5 10 2 0.3 V µs 40 MIN 800 5 1.5 10 130 1.0 TYP. MAX UNIT V V V µA mA mA SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO ICES hFE-1 hFE-2 VF tf 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1880 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1880 4