2SD1910

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1910 DESCRIPTION ·With TO-3PFM package ·High breakdown voltage ·High speed switching ·Built-in damper diode APPLICATIONS ·For use in TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PFM) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 6 3 6 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1910 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage CONDITIONS IC=0.1A , IB=0 IC=2.5A ; IB=0.8A IC=2.5A ; IB=0.8A VCB=800V; IE=0 VEB=6V; IC=0 IC=0.5A ; VCE=5V IF=3A 50 8 MIN 600 5.0 1.5 10 200 25 2.0 V TYP. MAX UNIT V V V µA mA SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO IEBO hFE VF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1910 Fig.2 outline dimensions 3