2SD1913

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1274 ·High reliability. ·High breakdown voltage ·Low saturation voltage. ·Wide area of safe operation APPLICATIONS ·60V/3A low-frequency power amplifier ·General power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD1913 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 60 60 6 3 8 20 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=1mA; IE=0 IC=5mA; RBE=? IE=1mA; IC=0 IC=2A ; IB=0.2A IC=0.5A ; VCE=5V VCB=40V;IE=0 VEB=4V;IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=5V IE=0 ; VCB=10V; f=1MHz 70 20 MIN 60 60 6 SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Cob 2SD1913 TYP. MAX UNIT V V V 0.4 0.8 1.0 1.0 0.1 0.1 280 V V mA mA 100 40 MHz pF hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1913 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1913 4