2SD2017

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2017 DESCRIPTION ·With TO-220F package ·DARLINGTON APPLICATIONS ·Driver for solenoid,relay and motor and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 300 250 20 6 1 35 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=25mA ;IB=0 IC=2A ;IB=2mA IC=2A ;IB=2mA VCB=300V; IE=0 VEB=20V; IC=0 IC=2A ; VCE=2V IE=-1A ; VCE=12V f=1MHz;VCB=10V 2000 MIN 250 2SD2017 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V 1.5 2.0 100 10 V V µA mA 20 65 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=2.0A ;IB1=5mA;IB2=-10mA VCC=100V ,RL=50@ 0.6 16.0 3.0 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2017 Fig.2 Outline dimensions 3