2SD2023

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2023 DESCRIPTION ·With TO-220C package ·Complement to type 2SB1033 ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplifiers ·Power drivers ·DC-DC converters PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 80 60 6 3 1 40 150 -50~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Transition frequency CONDITIONS IC=10mA; IB=0 IC=50µA; IE=0 IE=50µA; IC=0 IC=2A; IB=0.2A IC=2A; IB=0.2A VCB=60V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=5V 60 MIN 60 80 6 2SD2023 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V V V 1.0 1.5 10 10 320 70 8 V V µA µA pF MHz hFE Classifications D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2023 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3