2SD2025

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2025 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SB1344 APPLICATIONS ·For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 8 10 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2025 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=5mA; IB=0 100 V V(BR)CBO Collector-base breakdown voltage IC=50µA; IE=0 100 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=2A ; VCE=3V 1000 20000 fT Transition frequency IC=0.2A ; VCE=5V 40 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2025 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3