2SD2057

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2057 DESCRIPTION ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode ·Wide area of safe operation APPLICATIONS ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VEBO IC ICM IB PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Max.operating junction temperature Storage temperature 100 150 -55~150 CONDITIONS Open emitter Open collector VALUE 1500 7 5 20 4 3 W UNIT V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=500mA ;IC=0 IC=5A; IB=1.2A IC=5A; IB=1.2A VCB=1000V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 hFE-1 hFE-2 fT VF ts tf DC current gain DC current gain Transition frequency Diode forward voltage Storage time IC=5A;IB1=-IB2=1.2A;LLeak=5µH Fall time IC=1A ; VCE=5V IC=5A ; VCE=10V IC=1A ; VCE=10V;f=0.5MHz IC=-6A ;IB=0 8 4.5 MIN 7 2SD2057 SYMBOL V(BR)EBO VCEsat VBEsat TYP. MAX UNIT V 8.0 1.5 30 0.3 V V µA mA 15 2 -2.3 12 0.8 MHz V µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2057 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3