2SD2095

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2095 DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 5 2.5 50 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SD2095 SYMBOL TYP. MAX UNIT V(BR)EBO VCEsat VBEsat ICBO hFE fT COB Emitter-base breakdown voltage IE=200mA , IC=0 IC=3.5A; IB=0.8A IC=3.5A; IB=0.8A VCB=500V; IE=0 IC=1A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=5A 5 V Collector-emitter saturation voltage 3.0 5.0 V Base-emitter saturation voltage 1.5 V Collector cut-off current 10 µA DC current gain 8 Transition frequency 3 MHz Collector output capacitance 105 pF VF tf Diode forward voltage 1.6 2.0 V Fall time ICP=3.5A ;IB1(end)=0.8A 0.5 1.0 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2095 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3