2SD2125

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2125 DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal output applications for color TV ·Medium resolution display PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 6 10 3 50 150 -55~150 V A A A W UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Diode forward voltage Fall time CONDITIONS IE=200mA , IC=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=6A ICP=5A ;IBL=1A;VCC=100V 8 5 MIN 5 2SD2125 SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE-1 hFE-2 fT COB VF tf TYP. MAX UNIT V 3.0 5.0 1.5 10 20 V V µA 3 165 2.0 0.5 MHz pF V µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2125 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3