2SD2241

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2241 DESCRIPTION ·With TO-220F package ·High DC current gain : hFE=2000 (Min) ·Low saturation voltage ·Complement to type 2SB1481 ·DARLINGTON APPLICATIONS ·With switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 Collector dissipation TC=25 Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 ±4 ±6 0.3 2.0 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=10mA ;IB=0 IC=3A ;IB=6mA IC=3A ;IB=6mA VCB=100V ;IE=0 VEB=5V; IC=0 IC=1.5A ; VCE=2V IC=3A ; VCE=2V IE=1A ; IB=0 2000 1000 MIN 100 2SD2241 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 VECF TYP. MAX UNIT V 1.5 2.0 20 2.5 V V µA mA 2.0 V Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCCA30V ,RL=10C Duty cycleD1% 0.2 1.5 0.6 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2241 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2241 4 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2241 5