2SD2300

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2300 DESCRIPTION ·With TO-3PFM package ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·For color TV horizontal output deflection applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PFM) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VEBO IC ICM IC(surge) PC Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector current-peak Collector surge current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 6 5 6 16 50 150 -55~150 UNIT V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2300 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Fall time Diode forward voltage CONDITIONS IE=350mA , IC=0 IC=4.5A ; IB=1.2A IC=4.5A ; IB=1.2A VCE=1500V; RBE=0 IC=1A ; VCE=5V IC=4A ; IB1=0.8A; IB2=-1.5A IF=6A MIN 6 5.0 1.5 500 20 1.0 3.0 µs V TYP. MAX UNIT V V V µA SYMBOL V(BR)EBO VCE(sat) VBE(sat) ICES hFE tf VF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2300 Fig.2 outline dimensions 3