2SD2386

SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2386 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB1557 ·High breakdown voltage:VCEO=140V(Min) APPLICATIONS ·Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 140 140 5 7 0.1 70 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=6A ;IB=6mA IC=6A ; VCE=5V VCB=140V IE=0 VEB=5V; IC=0 IC=6A ; VCE=5V IC=10A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=5V 5000 2000 90 30 MIN 140 2SD2386 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 Cob fT TYP. MAX UNIT V 2.5 3.0 5.0 5.0 30000 V V µA µA pF MHz hFE-1 Classifications A 5000-12000 B 9000-18000 C 15000-30000 2 SavantIC Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 2SD2386 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3