2SD2578

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·Color TV horizontal deflection output PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SD2578 Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 8 20 60 W UNIT V V V A A 1 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SD2578 SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat VBEsat ICBO ICES IEBO hFE-1 hFE-2 tf Collector-emitter sustaining voltage IC=100mA; IB=0 IC=5 A;IB=1A IC=5 A;IB=1A VCB=800V; IE=0 VCB=1500V; RBE=0 VEB=4V; IC=0 IC=5A ; VCE=5V IC=1A ; VCE=5V IC=4A;RL=50> IB1=0.8A;IB2=-1.6A;VCC=200V 800 V Collector-emitter saturation voltage 5 V Base-emitter saturation voltage 1.5 V Collector cut-off current 10 µA Collector cut-off current 1.0 mA Emitter cut-off current 40 130 mA DC current gain 5 8 DC current gain 15 30 Fall time 0.3 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2578 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2578 4