2SD288

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD288 DESCRIPTION ·With TO-220C package ·Collector-base voltage : VCBO=80V ·Collector dissipation : PC=25W(TC=25 ) APPLICATIONS ·Low frequency power amplifier ·Power regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 55 5 3 25 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA; IB=0 IC=0.5mA; IE=0 IE=0.5mA; IC=0 IC=1 A;IB=0.1 A VCB=50V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=5V 40 MIN 55 80 5 TYP. 2SD288 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE MAX UNIT V V V 1.0 50 50 240 V µA µA hFE classifications R 40-80 O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD288 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD288 4