2SD526

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD526 DESCRIPTION ·With TO-220C package ·Complement to type 2SB596 ·Good linearity of hFE APPLICATIONS ·Power amplifier applications ·Recommend for 20 25W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 80 80 5 4 0.4 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=3 A;IB=0.3 A IC=3A ; VCE=5V VCB=80V ;IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=0.5A ; VCE=5V IE=0; VCB=10V;f=1MHz 40 15 8 90 MIN 80 2SD526 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 1.5 1.5 30 100 240 V V µA µA MHz pF hFE-1 classifications R 40-80 O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD526 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD526 4