2SD546

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD546 DESCRIPTION ·With TO-66 package ·High breakdown voltage APPLICATIONS ·Converters ·Inverters ·Switching regulators PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 800 500 6 1 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD546 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=30mA ;IB=0 IE=1mA ;IC=0 IC=500mA; IB=100mA IC=500mA; IB=100mA VCB=800V; IE=0 VEB=6V; IC=0 IC=20mA ; VCE=10V IC=0.1A ; VCE=10V 40 7 MIN 500 6 1.0 1.5 0.1 0.1 200 MHz TYP. MAX UNIT V V V V mA mA SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD546 Fig.2 outline dimensions 3