2SD560

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD560 DESCRIPTION ·With TO-220C package ·Complement to type 2SB601 ·DARLINGTON APPLICATIONS ·Low frequency power amplifier ·Low speed switching industrial use PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current TC=25 PC Collector dissipation 1.5 Tj Tstg Junction temperature Storage temperature 150 -50~150 Open emitter Open base Open collector CONDITIONS VALUE 150 100 7 5 8 0.5 30 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=30mA; IB=0 IC=3A; IB=3mA IC=3A; IB=3mA VCB=100V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=2V IC=5A ; VCE=2V 2000 500 6000 MIN 100 TYP. 2SD560 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 MAX UNIT V 1.5 2.0 1 3 15000 V V µA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=3A;IB1=-IB2=3mA VCC=50V;RL=16.7? 1.0 3.5 1.2 µs µs µs hFE-1 Classifications R 2000-5000 O 3000-7000 Y 5000-15000 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD560 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3