2SD5702

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD5702 DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed APPLICATIONS ·For color display horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 6 16 60 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Diode forward voltage Fall time CONDITIONS IC=4A ;IB=0.8A IC=4A; IB=0.8A VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=3A ; VCE=5V IC=1A ; VCE=10V IF=6A IC=4A ;IB1=0.8A;IB2=-1.6A VCC=200V; RL=50@ 40 10 5 MIN 2SD5702 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT VF tf TYP. 2.0 MAX 5.0 1.5 10 200 30 15 UNIT V V µA mA 3 2.0 0.4 MHz V µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD5702 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3