2SD600

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SD600 2SD600K Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Total power dissipation Junction temperature Storage temperature Ta=25 TC=25 2SD600 2SD600K Open collector Open base CONDITIONS Open emitter VALUE 100 120 100 120 5 1 2 1 8 150 -55~150 V A A W V UNIT V VCEO VEBO IC ICM PD Tj Tstg SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD600 IC=1mA; RBE== 2SD600K 2SD600 IC=10µA ;IE=0 2SD600K IE=10µA ;IC=0 IC=0.5A ;IB=50mA IC=0.5A ;IB=50mA VCB=50V; IE=0 VEB=4V; IC=0 IC=50mA ; VCE=5V IC=0.5A ; VCE=5V IC=50mA ; VCE=10V f=1MHz ; VCB=10V CONDITIONS SYMBOL 2SD600 2SD600K MIN 100 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 120 100 V 120 5 0.4 1.2 1 1 60 20 130 20 MHz pF 320 V V V µA µA V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Switching times tf toff tstg Fall time Turn-off time Storage time IC=500mA ; VCE=12V IB1=-IB2=50mA 0.1 0.5 0.7 µs µs µs hFE-1 Classifications D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD600 2SD600K Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K 4