2SD686

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD686 DESCRIPTION ·With TO-220C package ·Complement to type 2SB676 ·DARLINGTON ·High DC current gain APPLICATIONS ·Switching applications ·Hammer drive,pulse motor drive ·Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 100 80 5 4 30 150 -50~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; IB=0 IC=3A; IB=6mA IC=3A; IB=6mA VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V 2000 1000 MIN 80 TYP. 2SD686 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 MAX UNIT V 1.5 2.0 20 2.5 V V µA mA Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC=30V;RL=10@ 0.2 1.5 0.6 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD686 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3