2SD727

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD727 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB691 APPLICATIONS ·For low frequency power amplifier and power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 130 130 5 5 60 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD727 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A ;IB=0.5A VCB=130V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A ; VCE=5V IE=0 ;f=1MHz;VCB=10V 60 20 7 110 MHz pF MIN 130 5 2.5 0.1 0.1 200 TYP. MAX UNIT V V V mA mA SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT COB 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD727 Fig.2 outline dimensions 3