2SD733

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD733 2SD733K DESCRIPTION ·With TO-3 package ·Complement to type 2SB697/697K ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2SD733 VCBO Collector-base voltage 2SD733K 2SD733 VCEO Collector-emitter voltage 2SD733K VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 160 6 12 20 100 150 -40~150 V A A W Open emitter 180 140 V CONDITIONS VALUE 160 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS 2SD733 2SD733K SYMBOL MIN TYP. MAX UNIT 2SD733 V(BR)CEO Collector-emitter breakdown voltage 2SD733K IC=50mA ;IB=0 140 V 160 2SD733 V(BR)CBO Collector-emitter breakdown voltage 2SD733K IC=5mA ;IE=0 160 V 180 V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Emitter-base breakdown voltage IE=5mA ;IC=0 IC=6A; IB=0.6A IC=1A ; VCE=5V VCB=80V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=-5V IC=5A ; VCE=5V IC=1A ; VCE=5V 6 V Collector-emitter saturation voltage 0.7 2.5 V Base-emitter on voltage 1.5 V Collector cut-off current 0.1 mA Emitter cut-off current 0.1 mA DC current gain 40 320 DC current gain 20 Transition frequency 15 MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD733 2SD733K Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3