2SD762A

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD762 2SD762A DESCRIPTION ·With TO-220C package ·Wide area of safe operation APPLICATIONS ·For audio freuqency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER 2SD762 VCBO Collector-base voltage 2SD762A 2SD762 VCEO Collector-emitter voltage 2SD762A VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 8 4 6 1 30 150 -55~150 V A A A W Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD762 IC=0.2A; L=25mH 2SD762A IC=2 A;IB=0.4 A IC=1A ; VCE=3V VCB=50V; IE=0 VEB=8V; IC=0 IC=0.1A ; VCE=3V IC=1A ; VCE=3V CONDITIONS 2SD762 2SD762A SYMBOL MIN 60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 80 1.0 1.2 30 1 40 30 160 V V µA mA VCEsat VBE ICBO IEBO hFE-1 hFE-2 Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain hFE-2 classifications Q 30-60 P 50-100 O 80-160 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD762 2SD762A Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3