2SD798

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD798 DESCRIPTION ·With TO-220 package ·High voltage ·DARLINGTON APPLICATIONS ·With switching and igniter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector MAX 600 300 5 6 1 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IC=0.5A ;L=40mH IC=4A ;IB=0.04A IC=4A ;IB=0.04A VCB=600V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V f=1MHz;VCB=50V 1500 200 35 MIN 300 2SD798 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB TYP. MAX UNIT V 2.0 2.5 0.5 0.5 V V mA mA pF Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=0.04A VCC@100V,RL=25B 1 8 5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD798 Fig.2 Outline dimensions 3