SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD820
DESCRIPTION ·With TO-3 package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications
PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 5 -5 50 150 -65~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SD820
SYMBOL
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
600
V
VCEsat
Collector-emitter saturation voltage
IC=4 A;IB=0.8 A
3.0
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4 A;IB=0.8 A
1.5
V
ICBO
Collector cut-off current
VCB=500V;IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1
mA
hFE
DC current gain
IC=1A ; VCE=5V
8
20
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
165
pF
fT
Transition frequency
IC=0.1A ; VCE=10V
3
MHz
tf
Fall time
ICP=4A ;IB1=0.8A
0.5
1.0
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD820
Fig.2 Outline dimensions
3
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