2SD841

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD841 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·High speed switching ·High voltage:VCBO=800V(Min) APPLICATIONS ·High voltage switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 800 400 5 3 1.5 40 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance Fall time CONDITIONS IC=10mA , IB=0 IC=0.5A; IB=50mA IC=0.5A; IB=50mA VCB=800V; IE=0 VEB=5V; IC=0 IC=10mA ; VCE=5V IC=0.5A ; VCE=5V IE=-0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IC=0.5A; IB1=-IB2=50mA VCC=200V; RL=400@ 8 10 4 75 MIN 400 TYP. 2SD841 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB tf MAX UNIT V 1.0 1.5 1 1 V V mA mA MHz pF 1.0 µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD841 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3