2SD896

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD896 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB776 ·Wide area of safe operation APPLICATIONS ·100V/7A, AF 40W output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 100 6 7 11 70 150 -40~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;RBE=< IC=5mA ;IE=0 IE=5mA ;IC=0 IC=4A ;IB=0.4A IC=1A;VCE=5V VCB=80V IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 60 20 15 MIN 100 120 6 0.6 2SD896 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V V V 2.0 1.5 0.1 0.1 200 V V mA mA MHz pF 140 Switching times ton tstg tf Turn-on time Storage time Fall time IC=1.0A; IB1=-IB2=0.1A RL=20D;VCC=20V 0.2 6.0 0.6 µs µs µs hFE-1 Classifications D 60-120 E 100-200 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD896 Fig.2 outline dimensions 3 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD896 4