2SD951

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD951 DESCRIPTION ·With TO-3 package ·Built-in damper diode ·High voltage capability APPLICATIONS ·Line-operated horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VEBO IC ICM PT Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open collector VALUE 1500 5 3 5 65 130 -65~130 UNIT V V A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IE=500m A;IC=0 IC=2 .5A;IB=0.8 A IC=2 .5A;IB=0.8 A VCB=750V;IE=0 ICBO Collector cut-off current VCB=1500V;IE=0 hFE-1 hFE-2 VF tf ts DC current gain DC current gain Diode forward voltage Fall time IC=2.5A;IBend=0.8A;LB=5µH Storage time IC=1A ; VCE=5V IC=2.5A ; VCE=10V IF=4A 8 3 MIN 5 2SD951 SYMBOL V(BR)EBO VCEsat VBEsat TYP. MAX UNIT V 5.0 1.5 50 1.0 V V µA mA 1.7 0.9 11 V µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD951 Fig.2 Outline dimensions 3