BD132

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD132 DESCRIPTION ·Complement to type BD131 ·With TO-126 package ·High current (Max:- 3A) ·Low voltage (Max: -45V) APPLICATIONS ·For general purpose power applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IBM Pt Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature Tmb560 Open emitter Open base Open collector CONDITIONS VALUE -45 -45 -4 -3 -6 -0.5 15 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounting base VALUE 100 6 UNIT K/W K/W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage CONDITIONS IC=-0.5A; IB=-50mA IC=-2A; IB=-0.2A IC=-0.5A; IB=-50mA IC=-2A; IB=-0.2A VCB=-50V; IE=0 ICBO Collector cut-off current VCB=-50V; IE=0 Tj=150 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency VEB=-5V; IC=0 IC=-0.5A ; VCE=-12V IC=-2A ; VCE=-1V IC=-0.25A; VCE=-5V ;f=100MHz 40 20 60 MIN TYP. BD132 SYMBOL VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 MAX -0.3 -0.7 -1.2 -1.5 -50 -10 -50 UNIT V V V V nA µA nA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD132 Fig.2 Outline dimensions 3