BD135

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High current ·Complement to type BD136/138/140 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD135 BD137 BD139 Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD135 VCBO Collector-base voltage BD137 BD139 BD135 VCEO Collector-emitter voltage BD137 BD139 VEBO IC ICM IBM Pt Tj Tstg Tamb Emitter -base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Junction temperature Storage temperature Operating ambient temperature Tmb670 Open collector Open base Open emitter CONDITIONS VALUE 45 60 100 45 60 100 5 1.5 2 1 8 150 -65~150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb PARAMETER Thermal resistance from junction to ambient Thermal resistance from junction to mounting base VALUE 100 10 UNIT K/W K/W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter voltage CONDITIONS IC=0.5A; IB=50mA IC=500mA ; VCE=2V VCB=30V; IE=0 ICBO Collector cut-off current VCB=30V; IE=0 Tj=125 IEBO hFE-1 hFE-2 hFE-3 fT Emitter cut-off current DC current gain DC current gain BD135-10;BD137-10;BD139-10 BD135-16;BD137-16;BD139-16 DC current gain Transition frequency VEB=5V; IC=0 IC=5mA ; VCE=2V IC=150mA ; VCE=2V IC=500mA ; VCE=2V BD135 BD137 BD139 SYMBOL VCEsat VBE MIN TYP. MAX 0.5 1.0 100 10 100 UNIT V V nA µA nA 40 63 63 100 25 190 MHz 250 160 250 IC=50mA; VCE=5V ;f=100MHz 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD135 BD137 BD139 Fig.2 Outline dimensions 3