BD190

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·High current ·Complement to type BD189 APPLICATIONS ·For use in 5 to 10 watt audio amplifiers utilizing complementary or quasi complementary circuits. PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD190 Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB Pt Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Base current Total power dissipation Junction temperature Storage temperature Tmb770 Open emitter Open base Open collector CONDITIONS VALUE -70 -60 -5 -4 -2 40 -65~150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance, junction to case VALUE 3.12 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD190 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(SUS)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Collector-emitter sustaining voltage IC=-0.1A; IB=0 IC=-2.0A; IB=-0.2A IC=-2A ; VCE=-2V VCB=-70V; IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-2V IC=-2A ; VCE=-2V IC=-1.0A; VCE=-10V ;f=1.0MHz -60 V Collector-emitter saturation voltage -1.0 V Base-emitter on voltage -1.5 V Collector cut-off current -0.1 mA Emitter cut-off current -1.0 mA DC current gain 40 DC current gain 15 Transition frequency 2.0 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD190 Fig.2 Outline dimensions 3