BD203

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD203 DESCRIPTION ·With TO-220C package ·Low saturation voltage ·Complement to type BD204 ·Wide area of safe operation APPLICATIONS ·For medium power switching and amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 60 60 5 8 12 3 60 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 2.08 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD203 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency Base-emitter on voltage CONDITIONS IC=0.2A ;IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=3A; IB=0.3A IC=6A; IB=0.6A IC=6A; IB=0.6A VCE=30V ;IB=0; VCB=40V ;IE=0;Tj=150 VEB=5V; IC=0 IC=2A ; VCE=2V IC=0.3A ; VCE=3V IC=3A;VCE=2V 30 7.0 1.5 MHz V MIN 60 60 5 1.0 1.5 2.0 0.2 1.0 0.5 TYP. MAX UNIT V V V V V V mA mA mA SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICEO ICBO IEBO hFE fT VBE Switching times ton toff Turn-on time Turn-off time 1.0 4.0 µs µs IC=2A IB1=-IB2=0.2A; 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD203 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3