BD231

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD231 DESCRIPTION ·With TO-126 package ·Complement to type BD230 ·High current (Max:-1.5A) ·Low voltage (Max: -80V) APPLICATIONS ·Drive stage in TV circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IBM PD PD Tj Tstg Tamb PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current-Peak Total power dissipation Total power dissipation Junction temperature Storage temperature Operating ambient temperature Tmb462 TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -80 -5 -1.5 -3 -1 12.5 10 150 -65~150 -65~150 UNIT V V V A A A W W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-1A; IB=-0.1A IC=-1A; IB=-0.1A IC=-1A ; VCE=-2V VCB=-30V; IE=0 VEB=-5V; IC=0 IC=-5mA ; VCE=-2V IC=-150mA ; VCE=-2V IC=-1A ; VCE=-2V IC=-50mA ; VCE=-5V 40 40 25 50 MIN TYP. BD231 SYMBOL VCEsat VBEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT MAX -0.8 -1.1 -1.3 -0.1 -0.1 UNIT V V V µA µA 250 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD231 Fig.2 Outline dimensions 3