BD234

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type BD233/235 /237 APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD234 BD236 BD238 Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD234 VCBO Collector-base voltage BD236 BD238 BD234 VCEO Collector-emitter voltage BD236 BD238 VEBO IC ICM PC Tj Tstg Emitter -base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -45 -60 -100 -45 -60 -80 -5 -2 -6 25 150 -65~150 V A A W V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS BD234 BD236 BD238 SYMBOL MIN TYP. MAX UNIT VCEsat VBE Collector-emitter saturation voltage IC=-1A; IB=-0.1A IC=-1A ; VCE=-2V -0.6 V Base-emitter on voltage -1.3 V BD234 VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A; IB=0 -45 V BD236 -60 BD238 -80 BD234 ICBO Collector cut-off current VCB=-45V; IE=0 VCB=-60V; IE=0 VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-150mA ; VCE=-2V IC=-1A ; VCE=-2V IC=-250mA; VCE=-10V 40 -1 mA -100 µA BD236 BD238 IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain 25 Transition frequency 3 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD234 BD236 BD238 Fig.2 Outline dimensions 3