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BD239B

BD239B

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    BD239B - Silicon NPN Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BD239B 数据手册
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD239/A/B/C DESCRIPTION With TO-220C package ·Complement to type BD240/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD239 VCBO Collector-base voltage BD239A BD239B BD239C BD239 VCEO Collector-emitter voltage BD239A BD239B BD239C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 55 70 90 115 45 60 80 100 5 2 4 0.6 30 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD239/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD239 BD239A IC=30mA; IB=0 BD239B BD239C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD239/A ICEO Collector cut-off current BD239B/C BD239 BD239A ICES Collector cut-off current BD239B BD239C IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=0.2A ; VCE=4V IC=1A ; VCE=4V 40 15 1 mA VCE=60V; IB=0 VCE=45V; VBE=0 VCE=60V; VBE=0 0.2 mA IC=1 A;IB=0.2 A IC=1A ; VCE=4V VCE=30V; IB=0 0.3 mA 80 100 0.7 1.3 V V CONDITIONS MIN 45 60 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD239/A/B/C Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3
BD239B
1. 物料型号: - BD239/A/B/C

2. 器件简介: - 该PDF文档描述的是SavantIC Semiconductor生产的硅NPN功率晶体管,型号包括BD239、BD239A、BD239B和BD239C,封装为TO-220C。

3. 引脚分配: - 1号引脚:基极(Base) - 2号引脚:集电极,连接到安装底(Collector; connected to mounting base) - 3号引脚:发射极(Emitter)

4. 参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):BD239为55V,BD239A为70V,BD239B为90V,BD239C为115V - VCEO(集电极-发射极电压):BD239为45V,BD239A为60V,BD239B为80V,BD239C为100V - VEBO(发射极-基极电压):5V - Ic(集电极电流):2A - ICM(集电极峰值电流):4A - IB(基极电流):0.6A - Pc(集电极功率耗散):30W - Tj(结温):150°C - Tstg(储存温度):-65°C至150°C

5. 功能详解: - 该晶体管适用于中等功率的线性和开关应用。特性表中列出了在不同条件下的最小值、典型值和最大值,例如VCEO(SUS)、VCEsat、VBE、ICEO、IcEs、IEBO和hFE。

6. 应用信息: - 适用于中等功率的线性和开关应用。

7. 封装信息: - 封装为TO-220C,PDF中提供了该封装的简化外形图和符号。
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