BD242

BD242

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    BD242 - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
BD242 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD242/A/B/C DESCRIPTION ·With TO-220C package ·Complement to type BD241/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD242 VCBO Collector-base voltage BD242A BD242B BD242C BD242 VCEO Collector-emitter voltage BD242A BD242B BD242C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -3 -5 -1 40 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD242/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD242 BD242A IC=30mA; IB=0 BD242B BD242C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD242/A ICEO Collector cut-off current BD242B/C BD242 BD242A ICES Collector cut-off current BD242B BD242C IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCE=-80V; VBE=0 VCE=-100V; VBE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V 25 10 -1 mA VCE=-60V; IB=0 VCE=-45V; VBE=0 VCE=-60V; VBE=0 -0.2 mA IC=-3A;IB=-0.6 A IC=-3A ; VCE=-4V VCE=-30V; IB=0 -0.3 mA -80 -100 -1.2 -1.8 V V CONDITIONS MIN -45 -60 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD242/A/B/C Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3
BD242
1. 物料型号: - BD242/A/B/C是SavantIC Semiconductor生产的硅PNP功率晶体管。

2. 器件简介: - 这些晶体管采用TO-220C封装,适用于中功率线性和开关应用。

3. 引脚分配: - PIN 1: Emitter(发射极) - PIN 2: Collector; connected to mounting base(集电极;连接到安装底座) - PIN 3: Base(基极)

4. 参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):BD242为-55V,BD242A为-70V,BD242B为-90V,BD242C为-115V。 - VCEO(集电极-发射极电压):BD242为-45V,BD242A为-60V,BD242B为-80V,BD242C为-100V。 - VEBO(发射极-基极电压):-5V。 - Ic(集电极电流):-3A。 - ICM(集电极峰值电流):-5A。 - IB(基极电流):-1A。 - Pc(集电极功率耗散):40W。 - Tj(结温):150°C。 - Tstg(存储温度):-65至150°C。

5. 功能详解: - 特性(在Tj=25°C时,除非另有说明): - VCEO(SUS)(集电极-发射极维持电压):BD242为-45V,BD242A为-60V,BD242B为-80V,BD242C为-100V。 - VCEsat(集电极-发射极饱和电压):-1.2V。 - VBE(基极-发射极导通电压):-1.8V。 - ICEO(集电极截止电流):BD242/A为-0.3mA,BD242B/C为-0.3mA。 - IcEs(集电极截止电流):BD242为-0.2mA,BD242A为-0.2mA,BD242B为-0.2mA,BD242C为-0.2mA。 - IEBO(发射极截止电流):-1mA。 - hFE-1(直流电流增益,Ic=-1A; VcE=-4V):25。 - hFE-2(直流电流增益,Ic=-3A; VcE=-4V):10。

6. 应用信息: - 适用于中功率线性和开关应用。

7. 封装信息: - 封装类型为TO-220C,具体尺寸见图2(未提供具体尺寸数值,仅提供了封装的图片链接)。
BD242 价格&库存

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