BD245C

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD246/A/B/C APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD245/A/B/C Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER BD245 VCBO Collector-base voltage BD245A BD245B BD245C BD245 VCEO Collector-emitter voltage BD245A BD245B BD245C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 55 70 90 115 45 60 80 100 5 10 15 3 80 -65~150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.56 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD245/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD245 Collector-emitter breakdown voltage BD245A IC=30mA ;IB=0 BD245B BD245C VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain BD245/245A BD245B/245C IC=3A ;IB=0.3A IC=10A ;IB=2.5A IC=3A ; VCE=4V IC=10A ; VCE=4V VCE=30V; IB=0 0.7 VCE=60V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=10A ; VCE=4V 40 20 4 1.0 mA mA 80 100 1.0 4.0 1.6 3.0 V V V V CONDITIONS MIN 45 60 V TYP. MAX UNIT SYMBOL VCEO(BR) ICEO IEBO hFE-1 hFE-2 hFE-3 Switching times ton toff Turn-on time Turn-off time IC=1A; IB1=-IB2=0.1A RL=20@ 0.3 1.0 µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD245/A/B/C Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3