BD246

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD246/A/B/C DESCRIPTION ·With TO-3PN package ·Complement to type BD245/A/B/C APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER BD246 VCBO Collector-base voltage BD246A BD246B BD246C BD246 VCEO Collector-emitter voltage BD246A BD246B BD246C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base CONDITIONS VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -10 -15 -3 80 -65~150 -65~150 V A A A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.56 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors BD246/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD246 Collector-emitter breakdown voltage BD246A IC=30mA ;IB=0 BD246B BD246C VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage Collector cut-off current BD246/246A BD246B/246C IC=-3A ;IB=-0.3A IC=-10A ;IB=-2.5A IC=-3A ; VCE=-4V IC=-10A ; VCE=-4V VCE=-30V; IB=0 -0.7 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=-10A ; VCE=-4V 40 20 4 -1 mA mA -80 -100 -1.0 -4.0 -1.6 -3.0 V V V V CONDITIONS MIN -45 -60 V TYP. MAX UNIT SYMBOL VCEO ICEO IEBO hFE-1 hFE-2 hFE-3 Emitter cut-off current DC current gain DC current gain DC current gain Switching times ton toff Turn-on time Turn-off time IC=-1A; IB1=-IB2=-0.1A RL=20> 0.2 0.8 µs µs 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD246/A/B/C Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3